Superlattice to Nanoelectronics

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Superlattice to Nanoelectronics

Δημοσίευση από billyjean Την / Το Παρ Δεκ 28, 2007 10:15 am

Superlattice to Nanoelectronics
By: Raphael Tsu

ISBN-10: 008044377X , ISBN-13: 9780080443775
Publisher: Elsevier Science - 2005-05-19
Hardcover | 340 Pages

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From the Publisher:

Superlattice to Nanoelectronics
provides a historical overview of the early work performed by Tsu and
Esaki, to orient those who want to enter into this nanoscience. It
describes the fundamental concepts and goes on to answer many questions
about todays 'Nanoelectronics'. It covers the applications and types of
devices which have been produced, many of which are still in use today.
This historical perspective is important as a guide to what and how
technology and new fundamental ideas are introduced and developed.

The
author communicates a basic understanding of the physics involved from
first principles, whilst adding new depth, using simple mathematics and
explanation of the background essentials.

Topics covered include:

  • Introductory materials
  • Superlattice, Bloch oscillations and transport
  • Tunneling in QWs to QDs
  • Optical properties: optical transitions, size dependent dielectric constant, capacitance and doping

  • Quantum devices: New approaches without doping and heterojunctions -
    quantum confinement via geometry and multipole electrodes. Issues of
    robustness, redundancy and I/O.
Researchers, course
students and research establishments should read this book, written by
the leading expert in nanoelectronics and superlattices.


  • The Author is one of the founders of the field of superlattices
  • The FIRST historical overview of the field

  • Provides a basic understanding of the physics involved from first
    principles, whilst adding new depth, using simple mathematics and
    explanation of the background essentials
Table of Contents:

Preface
Introduction

CHAPTER 1: SUPERLATTICE
    1.1 The Birth of the Man-Made Superlattice
    1.2 A Model for the Creation of Man-Made Energy Bands
    1.3 Transport Properties of a Superlattice 6
    1.4 More Rigorous Derivation of the Negative Differential Conductance
    1.5 Response of a Time-Dependent Electric Field
    1.6 NDC from the Hopping Model and Electric Field Induced Localization
    1.7 Experiments
    1.8 Type II Superlattice
    1.9 Physical Realization and Characterization of a Superlattice
    1.10 Summary
    References
CHAPTER 2: RESONANT TUNNELING VIA MAN-MADE QUANTUM WELL STATES
    2.1 The Birth of Resonant Tunneling
    2.2 Some Fundamentals
    2.3 Conductance from the Tsu–Esaki Formula
    2.4 Tunneling Time from the Time-Dependent Schro¨dinger Equation
    2.5 Damping in Resonant Tunneling
    2.6 Very Short ‘ and w for an Amorphous Quantum Well
    2.7 Self-Consistent Potential Correction of DBRT
    2.8 Experimental Confirmation of Resonant Tunneling
    2.9 Instability in RTD
    2.10 Summary
    References
CHAPTER 3: OPTICAL PROPERTIES AND RAMAN SCATTERING IN MAN-MADE QUANTUM SYSTEMS
    3.1 Optical Absorption in a Superlattice
    3.2 Photoconductivity in a Superlattice
    3.3 Raman Scattering in a Superlattice and Quantum Well
    3.4 Summary
    References
CHAPTER 4: DIELECTRIC FUNCTION AND DOPING OF A SUPERLATTICE
    4.1 Dielectric Function of a Superlattice and a Quantum Well
    4.2 Doping a Superlattice
    4.3 Summary
    References
CHAPTER 5: QUANTUM STEP AND ACTIVATION ENERGY
    5.1 Optical Properties of Quantum Steps
    5.2 Determination of Activation Energy in Quantum Wells
    5.3 Summary
    References
CHAPTER 6: SEMICONDUCTOR ATOMIC SUPERLATTICE (SAS)
    6.1 Silicon-Based Quantum Wells
    6.2 Si-Interface Adsorbed Gas (IAG) Superlattice
    6.3 Amorphous Silicon/Silicon Oxide Superlattice
    6.4 Silicon–Oxygen (Si–O) Superlattice
    6.5 Estimate of the Band-Edge Alignment Using Atomic States
    6.6 Estimate of the Band-Edge Alignment with HOMO–LUMO
    6.7 Estimation of Strain from a Ball and Stick Model
    6.8 Electroluminescence and Photoluminescence
    6.9 Transport through a Si–O Superlattice
    6.10 Comparison of a Si–O Superlattice and a Ge–Si Monolayer Superlattice
    6.11 Summary
    References
CHAPTER 7: Si QUANTUM DOTS
    7.1 Energy States of Silicon Quantum Dots
    7.2 Resonant Tunneling in Silicon Quantum Dots
    7.3 Slow Oscillations and Hysteresis
    7.4 Avalanche Multiplication from Resonant Tunneling
    7.5 Influence of Light and Repeatability under Multiple Scans
    7.6 Summary
    References
CHAPTER 8: CAPACITANCE, DIELECTRIC CONSTANT AND DOPING QUANTUM DOTS
    8.1 Capacitance of Silicon Quantum Dots
    8.2 Dielectric Constant of a Silicon Quantum Dot
    8.3 Doping a Silicon Quantum Dot
    8.4 Summary
    References
CHAPTER 9: POROUS SILICON
    9.1 Porous Silicon—Light Emitting Silicon
    9.2 Porous Silicon—Other Applications
    9.3 Summary
    References
CHAPTER 10: SOME NOVEL DEVICES
    10.1 Cold Cathode
    10.2 Saturation Intensity of PbS Quantum Dots
    10.3 Multipole Electrode Heterojunction Hybrid Structures
    10.4 Some Fundamental Issues: Mainly Difficulties
    10.5 Comments on Quantum Computing
    10.6 Summary
    References
CHAPTER 11: QUANTUM IMPEDANCE OF ELECTRONS
    11.1 Landauer Conductance Formula
    11.2 Electron Quantum Waveguide (EQW)
    11.3 Wave Impedance of Electrons
    11.4 Summary
    References
CHAPTER 12: NANOELECTRONICS: WHERE ARE YOU?
    References

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